Properties of small-aperture selectively oxidized VCSELs
Conference
·
OSTI ID:458140
We report an analysis of the size dependence of VCSEL threshold which agrees with experimental results. The increasing threshold current density of small area VCSELs arises from both increasing threshold gain and increasing leakage current.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 458140
- Report Number(s):
- SAND--96-2010C; CONF-961113--23; ON: DE96014028
- Country of Publication:
- United States
- Language:
- English
Similar Records
Cavity structures for low loss oxide-confined VCSELs
Scalability of small-aperture selectively oxidized vertical cavity lasers
Size dependence of selectively oxidized VCSEL transverse mode structure
Conference
·
Thu May 01 00:00:00 EDT 1997
·
OSTI ID:474941
Scalability of small-aperture selectively oxidized vertical cavity lasers
Journal Article
·
Fri Jan 31 23:00:00 EST 1997
· Applied Physics Letters
·
OSTI ID:467144
Size dependence of selectively oxidized VCSEL transverse mode structure
Conference
·
Fri May 01 00:00:00 EDT 1998
·
OSTI ID:642785