EFFECT OF 1-MeV ELECTRON RADIATION ON SILICON SOLAR CELLS. (in French)
Journal Article
·
· Sci. Ind. Spatiales, 2: No. 9-10, 39-44(1966).
OSTI ID:4574949
- Research Organization:
- Centre d'Etudes Nucleaires, Grenoble, France
- NSA Number:
- NSA-22-007189
- OSTI ID:
- 4574949
- Journal Information:
- Sci. Ind. Spatiales, 2: No. 9-10, 39-44(1966)., Other Information: Orig. Receipt Date: 31-DEC-68
- Country of Publication:
- Country unknown/Code not available
- Language:
- French
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Journal Article
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Tue May 01 00:00:00 EDT 1984
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OSTI ID:4574949
EFFECTS OF 22-MeV PROTON AND 2.4-MeV ELECTRON RADIATION ON BORON AND ALUMINUM-DOPED SILICON SOLAR CELLS.
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OSTI ID:4574949
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Related Subjects
N32400* -Engineering-Energy Conversion
CONVERSION
ELECTRONS
ENERGY
MEV RANGE
PHOTOELECTRIC CELLS
RADIATION EFFECTS
SEMICONDUCTORS
SILICON
SUN
SILICON/radiation effects on solar cells of
1-MeV electron
ELECTRONS/effects on silicon solar cells
1-MeV
SOLAR CELLS/radiation effects on silicon
1-MeV electron
CONVERSION
ELECTRONS
ENERGY
MEV RANGE
PHOTOELECTRIC CELLS
RADIATION EFFECTS
SEMICONDUCTORS
SILICON
SUN
SILICON/radiation effects on solar cells of
1-MeV electron
ELECTRONS/effects on silicon solar cells
1-MeV
SOLAR CELLS/radiation effects on silicon
1-MeV electron