Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

RADIATION EFFECTS ON SILICON. Quarterly Progress Report No. 3, December 1, 1964-February 28, 1965

Technical Report ·
OSTI ID:4564529
; ;
Research Organization:
General Atomic, San Diego, Calif. John Jay Hopkins Lab. for Pure and Applied Science
NSA Number:
NSA-20-019110
OSTI ID:
4564529
Report Number(s):
N-65-21762; NASA-CR-62241; GAC
Country of Publication:
United States
Language:
English

Similar Records

RESEARCH IN NUCLEAR PHYSICS. Quarterly Progress Report, December 1, 1964- February 28, 1965
Technical Report · Sun Oct 31 00:00:00 EDT 1965 · OSTI ID:4598161
ELECTRON TUBES RADIATION RESISTANT PILOT LINE PRODUCTION. Seventh Quarterly Progress Report, December 1, 1964-February 28, 1965
Technical Report · Sat Feb 27 23:00:00 EST 1965 · OSTI ID:4627415
TECHNICAL SERVICES QUARTERLY PROGRESS REPORT FOR DECEMBER 1964-FEBRUARY 1965
Technical Report · Thu Jun 24 00:00:00 EDT 1965 · OSTI ID:4589816

Related Subjects

ACTIVATION ENERGY
DEFECTS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRON BEAMS
ENERGY LEVELS
INSTRUMENTATION
LATTICES
MEASURED VALUES
RADIATION EFFECTS
Radiation Effects
SILICON
THERMODYNAMICS
VACANCIES