Development of large-area monolithically integrated silicon-film{trademark} photovoltaic modules. Final subcontract report, May 1, 1991--December 31, 1994
- AstroPower, Inc., Newark, DE (United States)
The objective of this program is to develop Silicon Film{trademark} Product III into a low-cost, stable solar cell for large-scale terrestrial power applications. The Product III structure is a thin (<100 {mu}m) polycrystalline layer of silicon on a durable, insulating, ceramic substrate. The insulating substrate allows the silicon layer to be isolated and metallized to form a monolithically interconnected array of solar cells. High efficiency is achieved by the use of light trapping and passivated surfaces. This project focused on the development of five key technologies associated with the monolithic sub-module device structure: (1) development of the film deposition and growth processes; (2) development of the low-cost ceramic substrate; (3) development of a metallurgical barrier technology; (4) development of sub-element solar cell processing techniques; and (5) development of sub-module (isolation and interconnection) processes. This report covers the development approaches and results relating to these technologies. Significant progress has been made in the development of all of the related technologies. This is evidenced by the fabrication of a working 12.0 cm{sup 2} prototype sub-module consisting of 7 elements and testing with an open circuit voltage of 3.9 volts, a short circuit current of 35.2 mA and a fill factor of 63% and an overall efficiency of 7.3%. Another significant result achieved is a 13.4% (NREL verified), 1.0 cm{sup 2} solar cell fabricated from material deposited and grown on a graphite cloth substrate. The significant technological hurdle of the program was and remains the low quality of the photovoltaic layer which is caused by contamination of the photovoltaic layer from the low-cost ceramic substrate by trace impurities found in the substrate precursor materials. The ceramic substrate and metallurgical barrier are being developed specifically to solve this problem.
- Research Organization:
- Radiation Systems, Inc., Cleveland, TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 45586
- Report Number(s):
- NREL/TP-413-7702; ON: DE95004089; TRN: 95:003730
- Resource Relation:
- Other Information: PBD: Apr 1995
- Country of Publication:
- United States
- Language:
- English
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