Electronic structure of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} and Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8}: Near-O-1{ital s}-threshold excitation x-ray fluorescence studies
- Department of Physics, Uppsala University, Box 530, S-75121 Uppsala (Sweden)
- Physics Department, University of Washington, Seattle, Washington 98195 Molecular Science Research Centre, Pacific Northwest Labs, Richland, Washington 99352 (United States)
- Department of Inorganic Chemistry, Chalmers University of Technology University of Goeteborg, S-412 96 Goeteborg (Sweden)
- Department of Synchrotron Radiation Research, Institute of Physics, Lund University, Soelvegatan 14, S-22362 Lund (Sweden)
The character of unoccupied and occupied states in Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} and Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8} was investigated by measuring O 1{ital s} x-ray absorption and O {ital K}{alpha} x-ray emission spectra. To record the latter, various excitation energies around the O 1{ital s} edge were used. An appreciable excitation energy dependence for the emission spectra was observed and it was attributed to changes in the relative number of excited inequivalent oxygen atoms. It was found that the first, second, and third prepeaks near the O 1{ital s} edge of the Tl-based cuprate are mainly related to the oxygen atoms in the CuO{sub 2}, BaO, and TlO planes, respectively, whereas, the single prepeak in the O 1{ital s} absorption spectrum of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} is due to transitions to the in-CuO{sub 2}-plane oxygen 2{ital p} states. Analysis of the results obtained suggests that there are doping-induced holes on all the types of the O atoms in Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8} and only at in-CuO{sub 2}-plane oxygen sites in Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}}.
- OSTI ID:
- 45542
- Journal Information:
- Physical Review, B: Condensed Matter, Vol. 51, Issue 17; Other Information: PBD: 1 May 1995
- Country of Publication:
- United States
- Language:
- English
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