LOW-ENERGY PROTON DAMAGE EFFECTS IN SILICON SURFACE-BARRIER DETECTORS.

Coleman, J A; Love, D P; Trainor, J H; Williams, D J

doi:10.1109/TNS.1968.4324890

LOW-ENERGY PROTON DAMAGE EFFECTS IN SILICON SURFACE-BARRIER DETECTORS.

Journal Article · Mon Jan 01 04:00:00 EST 1968 · IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., NS-15: 482- 90(Feb. 1968).

DOI:https://doi.org/10.1109/TNS.1968.4324890· OSTI ID:4528205

Coleman, J A; Love, D P; Trainor, J H; Williams, D J

Research Organization:: National Bureau of Standards, Washington, D. C.

Sponsoring Organization:: USDOE

NSA Number:: NSA-22-028268

OSTI ID:: 4528205

Journal Information:: IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., NS-15: 482- 90(Feb. 1968)., Journal Name: IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., NS-15: 482- 90(Feb. 1968).

Country of Publication:: Country unknown/Code not available

Language:: English

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Related Subjects

KEV RANGE
MEV RANGE
N26500* --Instrumentation--Radiation Effects on Instruments & Instrument Components
PROTONS
PROTONS/effects of 0.05- to 1.0 MeV
on useful lifetime of surface-barrier silicon detectors
RADIATION DETECTORS
SEMICONDUCTOR (SILICON)/radiation effects on useful lifetime of surface-barrier
0.05- to 1.0- MeV proton
RADIATION EFFECTS
SEMICONDUCTORS
SILICON
SOLID-STATE COUNTERS

LOW-ENERGY PROTON DAMAGE EFFECTS IN SILICON SURFACE-BARRIER DETECTORS.

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