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Title: INTRODUCTION RATES OF ELECTRICALLY ACTIVE DEFECTS IN n- AND p-TYPE SILICON BY ELECTRON AND NEUTRON IRRADIATION.

Journal Article · · J. Appl. Phys., 39: 2890(May 1968).
DOI:https://doi.org/10.1063/1.1656690· OSTI ID:4524911
;

Research Organization:
Sandia Corp., Albuquerque, N. Mex.
Sponsoring Organization:
USDOE
NSA Number:
NSA-22-029562
OSTI ID:
4524911
Journal Information:
J. Appl. Phys., 39: 2890(May 1968)., Other Information: Orig. Receipt Date: 31-DEC-68
Country of Publication:
Country unknown/Code not available
Language:
English

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Related Subjects

N33110* -Physics (Solid State)-Radiation Effects
DEFECTS
IRRADIATION
NEUTRONS
RADIATION EFFECTS
SILICON ELECTRONS
SILICON/radiation effects on n- and p-type
carrier removal rates from electron and neutron
NEUTRONS/effects on carrier removal rates of n- and p-type silicon
ELECTRONS/effects on carrier removal rates of n- and p-type silicon