Photoassisted anodic etching of gallium nitride
- Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Electrical, Computer, and System Engineering
The first study of photo-assisted anodic etching of unintentionally doped n-GaN at room temperature is reported here. The electrolyte used is a mixture of buffered aqueous solution of tartaric acid and ethylene glycol. The etching rate varies from {approximately}20 {angstrom}/min to as high as 1600 {angstrom}/min. A systematic study shows that (1) the etch rate, as well as the surface roughness, increases with the current density; (2) the etching rate is the highest when the pH of the electrolyte is {approximately}7; and (3) the etching is faster when there is more ethylene glycol in the electrolyte solution. Ga-N-based III-V nitrides are important candidates for applications in blue light emitters and lasers, high voltage and high temperature electronics.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 452204
- Journal Information:
- Journal of the Electrochemical Society, Vol. 144, Issue 1; Other Information: PBD: Jan 1997
- Country of Publication:
- United States
- Language:
- English
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