Characterization of interface states in thin epitaxial film In{sub 0.75}Ga{sub 0.25}P/Ag diodes
- Laboratorio de Semiconductores, Departamento de Fisica, Universidad de Oriente, Apartado 188, Cumana 6101, Sucre (Venezuela)
- Ecole Polytechnic de Montreal, Departement de genie Physique, P.O. Box 6079, Station A, Montreal, Quebec (Canada)
Epitaxial In{sub 0.75}Ga{sub 0.25}P/Ag Schottky contacts were fabricated by electron beam evaporation of Ag on an epitaxial thin film of In{sub 0.75}Ga{sub 0.25}P grown on highly doped n-InP substrate by MOCVD. The diode showed non-ideal behavior with an ideality factor of 1.3 and is thought to have a metal-interface layer-semiconductor (MIS) structure. The room temperature small signal ac capacitance ({ital C}{sub {ital m}}) was measured as a function of applied voltage (V{sub {ital a}}), in the frequency ({ital f}) range 0.5 KHz and 1 MHz. Under forward bias, the large frequency dispersion in {ital C}{sub {ital m}} was attributed to the interface states in equilibrium with the semiconductor (In{sub 0.75}Ga{sub 0.25}P). From {ital C}{sub {ital m}}, the interface states capacitance {ital C}{sub {ital p}} was extracted. The experimental {ital C}{sub {ital p}}{minus}{ital f} data fitted well to Lehovec{close_quote}s model of an interface state continuum with a single time constant and provided the values of the interface states energy density ({ital N}{sub {ital ss}}), relaxation time ({tau}) and capture cross-section ({sigma}{sub {ital n}}) for forward bias (V{sub {ital a}}) voltages between 0.0 V and 0.4 V. Over the forward bias range 0.4V{gt}V{sub {ital a}}{gt}0.0V,{ital N}{sub {ital ss}} decreased linearly with bias from 1.7{times}10{sup 12} eV{sup {minus}1}cm{sup {minus}2} to 2.4{times}10{sup 11} eV{sup {minus}1}cm{sup {minus}2} and {sigma}{sub {ital n}} increased exponentially with bias from 1.9{times}10{sup {minus}15} cm{sup 2} to 3.9{times}10{sup {minus}9} cm{sup 2}. {copyright} {ital 1996 American Institute of Physics.}
- OSTI ID:
- 451094
- Report Number(s):
- CONF-9409431-; ISSN 0094-243X; TRN: 9703M0098
- Journal Information:
- AIP Conference Proceedings, Vol. 378, Issue 1; Conference: Surfaces, vacuum and their applications, Cancun (Mexico), 19-23 Sep 1994; Other Information: PBD: Jul 1996
- Country of Publication:
- United States
- Language:
- English
Similar Records
Large area vertical Ga2O3 Schottky diodes for X-ray detection
Electrical characteristics of Si sub 3 N sub 4 /Si/GaAs metal-insulator-semiconductor capacitor