TOF-Ion scattering spectrometer for surface analysis: Application to a GaAs (110) surface

Journal Article · Mon Jul 01 04:00:00 EDT 1996 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.51182· OSTI ID:451080

Pregliasco, R G; Gayone, J E; Sanchez, E A; Grizzi, O ^[1]

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1. Centro Atomico Bariloche-Comision Nacional de Energia Atomica, 8400 S. C. de Bariloche. (Argentina), Consejo Nacional de Investigaciones Cientificas y Tecnicas

We present our new time of flight-ion scattering spectrometer. A clean GaAs (110) surface has been prepared by: (i) standard cycles of ion bombardment and annealing and (ii) cycles of grazing ion bombardment and annealing. We have found that the surface can be smoothed out by this last method. We have measured the intensity of 5 keV Ne backscattered from the surface for different incidence directions. The scattering features are in good agreement with the accepted surface relaxation. {copyright} {ital 1996 American Institute of Physics.}

• OSTI ID: 451080
• Report Number(s): CONF-9409431--
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 378; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
66 PHYSICS
ANGULAR DISTRIBUTION
BACKSCATTERING
COMPUTER CODES
GALLIUM ARSENIDES
ION SCATTERING ANALYSIS
KEV RANGE 01-10
NEON IONS
TIME-OF-FLIGHT METHOD
TIME-OF-FLIGHT SPECTROMETERS