Angular dependence of the electronic energy loss of 800-keV He ions along the Si{l_angle}100{r_angle} direction

Journal Article · Sat Feb 01 04:00:00 EST 1997 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.55.4332· OSTI ID:451053

dos Santos, J H; Grande, P L; Behar, M; Boudinov, H ^[1]; Schiwietz, G ^[2]

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1. Instituto de Fisica da Universidade Federal do Rio Grande do Sul, Avenida Bento Goncalves 9500, 91501-970, Porto Alegre (Brazil)
2. Bereich F, Hahn-Meitner-Institut Berlin, Glienicker Strasse 100, D-14109 Berlin (Germany)

We present measurements of the stopping power of 800-keV {sup 4}He ions channeled along the Si{l_angle}100{r_angle} axis, as a function of the incidence angle. We compare the experimental results with theoretical calculations by using the impact-parameter-dependent energy loss obtained from the solution of the time-dependent Schr{umlt o}dinger equation through the coupled-channel method. This nonperturbative calculation provides reliable energy-loss results which are in good agreement with the experimental results. {copyright} {ital 1997} {ital The American Physical Society}

• OSTI ID: 451053
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 7 Vol. 55; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
CRYSTALS
ENERGY LOSSES
HELIUM 4 BEAMS
HELIUM IONS
ION CHANNELING
ION-ATOM COLLISIONS
SCHROEDINGER EQUATION
SILICON
STOPPING POWER