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Electronic structure of the shallow boron acceptor in 6H-SiC: A pulsed EPR/ENDOR study at 95 GHz

Journal Article · · Physical Review, B: Condensed Matter
; ;  [1]; ;  [2]
  1. Huygens Laboratory, Leiden University, P.O. Box 9504, 2300 RA Leiden (The Netherlands)
  2. A. F. Ioffe Physico-Technical Institute, Politechnischeskaya 26, 194021 St. Petersburg (Russia)
A high-frequency pulsed electron paramagnetic resonance electron-nuclear double-resonance (ENDOR) study on a {sup 13}C-enriched 6H-SiC single crystal is reported. This type of spectroscopy, owing to its superior spectral resolution, allows us to obtain detailed information about the electronic structure of the shallow boron acceptor centers in 6H-SiC. It is concluded that around 40{percent} of the spin density is localized in the p{sub z} orbital of a carbon which is nearest to boron. The p{sub z} orbital is directed along the C-B connection line and is parallel to the c axis for the hexagonal site and 70{degree} away from the c axis for the two quasicubic sites. We conclude that the C-B bond is a dangling bond, that boron is neutral, and that there is no direct spin density on boron. There is a relaxation of the carbon atom, carrying the spin density, and the boron atom away from each other. From a {sup 29}Si and {sup 13}C ENDOR study it is further concluded that around 60{percent} of the spin density is distributed in the crystal with a Bohr radius of 2.2 {Angstrom}. {copyright} {ital 1997} {ital The American Physical Society}
OSTI ID:
450342
Journal Information:
Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 4 Vol. 55; ISSN PRBMDO; ISSN 0163-1829
Country of Publication:
United States
Language:
English

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