An x-ray photoelectron spectroscopy investigation of O impurity chemistry in CdS thin films grown by chemical bath deposition
- National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)
We used x-ray photoelectron spectroscopy to investigate the chemistry of O impurity atoms in CdS thin films grown for photovoltaic purposes by chemical-bath deposition (CBD). We compared the Cd 3d photoline, O 1s photoline, Cd MNN Auger line, and O KLL Auger line taken from a CBD CdS thin film, CdS single-crystal reference, Cd metal reference, CdO reference, and Cd(OH){sub 2} reference. This comparison showed that the O present in thin-film CBD CdS is a manifestation of H{sub 2}O incorporated into the film during the CBD growth. Ar{sup +} ion sputtering, a technique frequently used in thin-film analyses, preferentially removed S from the CBD CdS thin film and created CdS{sub 1{minus}x}O{sub x} ({ital x}{approximately}0.04) in the surface region from the incorporated O impurity. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 450263
- Journal Information:
- Journal of Applied Physics, Vol. 81, Issue 4; Other Information: PBD: Feb 1997
- Country of Publication:
- United States
- Language:
- English
Similar Records
Impurities in chemical bath deposited CdS films for Cu(In,Ga)Se{sub 2} solar cells and their stability
Spectroscopic analysis of impurity precipitates in CdS films