Fluxon pinning in annular Josephson junctions by an external magnetic field

Journal Article · Sat Feb 01 04:00:00 EST 1997 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.363868· OSTI ID:450232

Vernik, I V; Keil, S ^[1]; Thyssen, N ^[2]; Doderer, T ^[1]; Ustinov, A V; Kohlstedt, H ^[2]; Huebener, R P ^[1]

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1. Physikalisches Institut, Lehrstuhl Experimentalphysik II, Universitaet Tuebingen, Auf der Morgenstelle 14, D-72076 Tuebingen (Germany)
2. Institut fuer Schicht- und Ionentechnik, Forschungszentrum Juelich (KFA), D-52425 Juelich (Germany)

The behavior of long annular Josephson junctions with various numbers n of trapped fluxons is studied in the presence of a uniform external magnetic field parallel to the plane of the junction{close_quote}s tunnel barrier. We report on measurements of the magnetic dependencies of the critical current and current{endash}voltage characteristics with different n. Experimental results are explained by the model assuming that a barrier-parallel magnetic field produces potential wells for fluxons and antifluxons at the opposite locations. We also present numerical simulations using the perturbed sine-Gordon equation with an additional magnetic-field-induced term. Good agreement is found between the measured critical current versus magnetic-field dependencies and the numerical simulations. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 450232
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 3 Vol. 81; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
COMPUTERIZED SIMULATION
CRITICAL CURRENT
FLUX QUANTIZATION
JOSEPHSON EFFECT
JOSEPHSON JUNCTIONS
MAGNETIC FIELDS
MAGNETIC FLUX
NUMERICAL ANALYSIS
NUMERICAL SOLUTION
PERTURBATION THEORY
SINE-GORDON EQUATION
SOLITONS
TRAPPING
TUNNEL EFFECT