Comparative study on two types of silicon p-n junction for photovoltaic and electronvoltaic cells
Journal Article
·
· J. Korean Nucl. Soc., v. 5, no. 1, pp. 13-19
OSTI ID:4481230
- Research Organization:
- Atomic Energy Research Inst., Seoul
- NSA Number:
- NSA-28-005446
- OSTI ID:
- 4481230
- Journal Information:
- J. Korean Nucl. Soc., v. 5, no. 1, pp. 13-19, Other Information: Orig. Receipt Date: 31-DEC-73
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
Similar Records
The junction characteristics of carbonaceous film/{ital n}-type silicon ({ital C}/{ital n}-Si) layer photovoltaic cell
STEADY-STATE RESPONSE OF SILICON RADIATION DETECTORS OF THE DIFFUSED p-n JUNCTION TYPE TO X RAYS. I. PHOTOVOLTAIC MODE OF OPERATION
In situ Auger electron spectroscopy studies of the growth of p-type microcrystalline silicon films on ZnO-coated glass substrates for microcrystalline silicon p-i-n solar cells
Journal Article
·
Fri Nov 01 00:00:00 EST 1996
· Applied Physics Letters
·
OSTI ID:4481230
+3 more
STEADY-STATE RESPONSE OF SILICON RADIATION DETECTORS OF THE DIFFUSED p-n JUNCTION TYPE TO X RAYS. I. PHOTOVOLTAIC MODE OF OPERATION
Journal Article
·
Sun Nov 01 00:00:00 EST 1964
· J. Res. Natl. Bur. Std.
·
OSTI ID:4481230
In situ Auger electron spectroscopy studies of the growth of p-type microcrystalline silicon films on ZnO-coated glass substrates for microcrystalline silicon p-i-n solar cells
Journal Article
·
Mon Nov 28 00:00:00 EST 2005
· Applied Physics Letters
·
OSTI ID:4481230