Doping dependence of the Fermi surface in the {ital t}-{ital J} model
- Supercomputer Computations Research Institute and National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32306 (United States)
The evolution of the Fermi surface upon hole doping is studied in the {ital t}-{ital J} model of correlated electrons by exact diagonalization of chains and planes. In one dimension at low hole doping, the momentum distribution function {ital n}({bold k}) indicates the presence of pocketlike features at the (noninteracting) Fermi momentum, while increasing the density of holes a large Fermi surface is observed. Although the results in two dimensions are consistent with this picture, conclusive evidence for the existence of hole pockets (at intermediate doping levels) cannot be provided in the present study of 4{times}4 and {radical}18 {times} {radical}18 square lattices. In order to improve the resolution in momentum space, twisted boundary conditions are used for the two-dimensional clusters.
- OSTI ID:
- 44540
- Journal Information:
- Physical Review, B: Condensed Matter, Vol. 51, Issue 17; Other Information: PBD: 1 May 1995
- Country of Publication:
- United States
- Language:
- English
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