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Annealing behavior of Ar ion irradiated Bi{sub 2}Sr{sub 2}Ca{sub n-1}Cu{sub n}O{sub 4+2n} superlattice and intergrowth films

Journal Article · · Journal of Low Temperature Physics
DOI:https://doi.org/10.1007/BF00753879· OSTI ID:443661
; ; ;  [1]
  1. National Research Institute for Metals, Sengen, Tsukuba (Japan); and others
Artificially layered Bi{sub 2}Sr{sub 2}Ca{sub n{minus}1}Cu{sub n}O{sub 4+2n} films were synthesized by sequential sputter deposition of BiO, SrCu{sub 0.5}O{sub 1.5} and CaCuO{sub 2} layers. Annealing behavior of these films which were irradiated by Ar ions was studied. Defect assisted improvement of their crystalline perfection is expected which might results in the improvement of the superconducting properties of these films. An artificial film, such as an intergrowth of 2223 and 2234 phases, and superstructure films of (2245){sub 1}(2201){sub 1} and (2234){sub 1}(2212){sub 1}, were irradiated by Ar ions (150 keV, 2 - 10x10{sup 12} ion/cm{sup 2}) and annealed at 730{degrees} C. An improvement of superconducting transition temperatures were observed.
Sponsoring Organization:
USDOE
OSTI ID:
443661
Report Number(s):
CONF-960808--
Journal Information:
Journal of Low Temperature Physics, Journal Name: Journal of Low Temperature Physics Journal Issue: 5-6 Vol. 105; ISSN JLTPAC; ISSN 0022-2291
Country of Publication:
United States
Language:
English