High-voltage electron microscope study of effects of preinjected helium on electron damage in aluminum

Journal Article · Mon Jan 01 04:00:00 EST 1973 · Micron, v. 4, no. 2, pp. 204-215

OSTI ID:4422309

Wolfenden, A

Defect clusters were formed and observed simultaneously in electron- irradiated foils of aluminum, both uninjected and preinjected with about 8 atomic ppM helium, in a high-voltage electron microscope operated at 650 kV. The nominal irradiation temperatures of the specimens were room temperature, 150 deg C and 200 deg C. The defect clusters in the form of dislocation loops formed in greater concentrations and persisted to longer times in the preinjected specimens than they did in the uninjected metal. At 200 deg C, no beam-induced loops were observed in the uninjected aluminium foil of usual thickness, but they were seen in the helium injected material. Faulted dislocation loops were more prevalent in the preinjected specimens. Under certain conditions the irradiated microstructure evolved to one resembling an unirradiated structure. It is concluded that the preinjected helium itself (rather than the associated alpha particle damage)-causes the enhanced dislocation loop formation in the electron- bombarded foils. (auth)

• Research Organization: Oak Ridge National Lab., TN
• NSA Number: NSA-29-008362
• OSTI ID: 4422309
• Journal Information: Micron, v. 4, no. 2, pp. 204-215, Journal Name: Micron, v. 4, no. 2, pp. 204-215; ISSN MICOB
• Country of Publication: United Kingdom
• Language: English

Related Subjects

*ALUMINIUM-- PHYSICAL RADIATION EFFECTS
DISLOCATIONS
DOPED MATERIALS
ELECTRON BEAMS
ELECTRON MICROSCOPY
HELIUM
HELIUM IONS
HIGH TEMPERATURE
ION IMPLANTATION
KEV RANGE 100-1000
MEDIUM TEMPERATURE
N50240* --Metals
Ceramics
& Other Materials--Metals & Alloys--Radiation Effects