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Title: A study of surface exchange at semiconducting Ga{sub 2}O{sub 3} thin film sensors for better sensitivity and higher selectivity

Conference ·
OSTI ID:441283
; ;  [1]
  1. Siemens AG Corporate Research and Development, Munich (Germany)

After the deposition of the surface layer, an annealing at least at 100{degrees}C above the desired operation temperature of the sensor for about 12h has been applied to ensure stability of the characteristics. The specimens have been characterised with respect to the surface morphology (SEM, AFM), atomic depth profile (SIMS, RBS) and crystalline phases (XRD) to identify the status of the applied material on the tempered sensor elements. The tested gases have been CH{sub 4}, CO, H{sub 2}, Iso-Butene, Acetone, Ethanol, NO, NH{sub 3} and a change of the oxygen concentration in wet air with concentrations typical for air monitoring. The temperatures tested range between 600-950{degrees}C. Long-term tests have been performed for some interesting modification. Especially with the oxides of the transition metaloxids, fundamental changes in the gas sensitivities of the sensors have been found due to their catalytic activity. Another important aspect was the change of the base resistance which showed whether the electrical conductivity occurs via the Ga{sub 2}O{sub 3} layer (as intender) or via the additional metal oxide layer.

OSTI ID:
441283
Report Number(s):
CONF-960782-; TRN: 96:006557-0054
Resource Relation:
Conference: 6. international meeting on chemical sensors, Gaithersburg, MD (United States), 22-25 Jul 1996; Other Information: PBD: 1996; Related Information: Is Part Of The 6th international meeting on chemical sensors; PB: 313 p.
Country of Publication:
United States
Language:
English