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Influence of interstitial ordering of nitrogen in tantalum on electrical resistivity

Journal Article · · Acta Metallurgica
In tantalum samples containing more than 1.2 at.% of nitrogen in solid solution, electrical resistivity is reduced by up to 58% during annealing. It is shown that this reduction is caused by partial ordering of the nitrogen atoms in the tantalum lattice. Experimental results on the dependence of resistivity on annealing time, annealing temperature, and nitrogen concentration are discussed.
Research Organization:
Kernforschungsanlage, Juelich, Ger.
Sponsoring Organization:
USDOE
NSA Number:
NSA-29-005503
OSTI ID:
4388062
Journal Information:
Acta Metallurgica, Journal Name: Acta Metallurgica Journal Issue: 1 Vol. 22; ISSN 0001-6160
Country of Publication:
Country unknown/Code not available
Language:
English

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