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Title: Depositing a metal layer on a substrate

Patent ·
OSTI ID:4359805

The method described is stated to be particularly applicable in the manufacture of target electrodes for x-ray tubes, such electrodes comprising a W layer deposited on a refractory substrate. A solid metal oxide that shows enhanced volatility in the presence of water vapour is heated, and water vapour carried by an inert gas stream is passed over or through the heated oxide, the stream subsequently being mixed with a reducing gas in the neighbourhood of the heated substrate, resulting in the deposition of a layer of the metal on the aubstrate. The reducing gas is preferably H/sub 2/, and suitable metals are W, Re, Mo, etc. If the metal oxide is tungstic oxide it should be heated to 1200 deg to 1400 deg C, and the substrate heated to about 1200 deg C. The inert gas stream may comprise N/sub 2/. The rate of deposition is determined by the gas flow rate and the time the gas spends in the vicinity of the metal oxide. The substrate may comprise W, Mo, or W--No alloy. The metal oxide may be replaced by the solid metal, in which case the gas may carry an oxidising agent for the metal; if the metal is W the water vapour may constitute the oxidising agent. (UK)

Research Organization:
Originating Research Org. not identified
NSA Number:
NSA-29-010625
OSTI ID:
4359805
Report Number(s):
GB 1328451
Resource Relation:
Other Information: Orig. Receipt Date: 30-JUN-74; Bib. Info. Source: UK (United Kingdom (sent to DOE from))
Country of Publication:
United Kingdom
Language:
English