{ital Q} switching of a diode-pumped Nd:YAG laser with GaAs
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853 (United States)
We investigated the properties of a diode-pumped Nd:YAG laser that is passively {ital Q} switched by a thin, single-crystal GaAs wafer. At 3W of incident pump power, the laser produced stable 7-ns pulses with 20{mu}J of energy at a 6-kHz repetition rate. For pump powers up to 2.2W, which resulted in 13.2-{mu}J pulses, the output mode was TEM{sub 00}. The shortest pulses that we observed were 3ns in duration. In addition to saturable absorption, we find that two-photon absorption and free-carrier effects determine pulse formation. {copyright} {ital 1996 Optical Society of America.}
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 434891
- Journal Information:
- Optics Letters, Journal Name: Optics Letters Journal Issue: 16 Vol. 21; ISSN OPLEDP; ISSN 0146-9592
- Country of Publication:
- United States
- Language:
- English
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