Femtosecond Yb:YAG laser using semiconductor saturable absorbers

Journal Article · Thu Nov 30 23:00:00 EST 1995 · Optics Letters

DOI:https://doi.org/10.1364/OL.20.002402· OSTI ID:434489

Hoenninger, C; Zhang, G; Keller, U ^[1]; Giesen, A ^[2]

---

1. Ultrafast Laser Physics, Institute of Quantum Electronics, Swiss Federal Institute of Technology, ETH Hoenggerberg--HPT, CH-8093 Zuerich (Switzerland)
2. Institut fuer Strahlwerkzeuge, Universitaet Stuttgart, Pfaffenwaldring 43, D-70569 Stuttgart (Germany)

We demonstrate a passively mode-locked femtosecond Yb:YAG laser using different semiconductor saturable absorber devices, a high-finesse and a low-finesse antiresonant Fabry{endash}Perot saturable absorber. We achieved pulses as short as 540 fs with dispersion compensation and 1.7-ps pulses without dispersion compensation. We also mode locked the laser at either 1.03 or 1.05 {mu}m by adjusting the band gap and antiresonance wavelength design of the antiresonant Fabry{endash}Perot saturable absorber. {copyright} {ital 1995 Optical Society of America.}

• Sponsoring Organization: USDOE
• OSTI ID: 434489
• Journal Information: Optics Letters, Journal Name: Optics Letters Journal Issue: 23 Vol. 20; ISSN 0146-9592; ISSN OPLEDP
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
FS RANGE
MODE LOCKING
NEAR INFRARED RADIATION
PERFORMANCE
PULSE TECHNIQUES
SOLID STATE LASERS