Delayed coincidence measurements using semiconductor detectors

Journal Article · Tue Jan 01 04:00:00 EST 1974 · Nucl. Instrum. Methods, v. 115, no. 1, pp. 61-64

DOI:https://doi.org/10.1016/0029-554X(74)90425-X· OSTI ID:4343642

Bishop, R J

The use of semiconductor detectors in delayed coincidence measurements of short nuclear half-lives is considered. Their use is illustrated by an accurate measurement of the half-life of the 86.5 keV excited state in /sup 233/ Pa. A result of (37.7 plus or minus 0.2) ns was obtained. The result of a measurement of the half-life of the 59.6 keV level in /sup 237/Np is also reported. The value obtained was (68.5 plus or minus 0.4) ns. Both these results are in good agreement with previous recent determinations. (auth)

• Research Organization: Kingston Polytechnic, Eng.
• Sponsoring Organization: USDOE
• NSA Number: NSA-29-018426
• OSTI ID: 4343642
• Journal Information: Nucl. Instrum. Methods, v. 115, no. 1, pp. 61-64, Journal Name: Nucl. Instrum. Methods, v. 115, no. 1, pp. 61-64; ISSN NUIMA
• Country of Publication: Country unknown/Code not available
• Language: English

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