Verification of three dimensional charge transport simulations using ion microbeams

Conference · Tue Dec 31 00:00:00 EST 1996

OSTI ID:434339

Horn, K M; Dodd, P E ^[1]; Breese, M B.H. ^[2]; Doyle, B L ^[1]

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1. Sandia National Labs., Albuquerque, NM (United States)
2. Oxford Univ. (United Kingdom). Dept. of Physics

Optically targeted, ion microbeams provide a useful means of exposing individual structures within an integrated circuit to ionizing radiation. With this tool, calibrated, low damage, charge collection spectra can be measured from specific circuit structures without preceding ion damage to the structure or surrounding circuitry. This paper presents comparisons of calibrated, low damage, ion microbeam- based charge collection measurements and three-dimensional, charge transport simulations of charge collection for isolated n- and p- channel field effect transistors under conducting and non-conducting bias conditions.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 434339
• Report Number(s): SAND-96-2837C; CONF-961120-1; ON: DE97000924
• Resource Relation: Conference: 5. international conference on nuclear microprobe techniques and applications (ICNMTA-5), Santa Fe, NM (United States), 11-15 Nov 1996; Other Information: PBD: [1996]
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
36 MATERIALS SCIENCE
CHARGE COLLECTION
COMPUTERIZED SIMULATION
TESTING
FIELD EFFECT TRANSISTORS
PHYSICAL RADIATION EFFECTS
SILICON
ION BEAMS
CHARGE TRANSPORT
INTEGRATED CIRCUITS
IONIZING RADIATIONS
THREE-DIMENSIONAL CALCULATIONS
SEMICONDUCTOR MATERIALS
IRRADIATION