Improvements in or relating to the formation of electrically insulating layers in semiconducting materials
A problem in the manufacture of semiconductor devices is the isolation of transistors and other components from the semiconducting material in, e.g., the manufacture of microelectronic devices. In the method described, the semiconducting material is formed with impurity atoms occupying substitutional sites in the crystal lattice, these atoms being capable, if released from their substitutional sites, of forming an electrically insulating material. The semiconducting material is subjected to ion bombardment, the ion type and energy being selected so as to create at the desired location for the insulating layer a region of radiation damage and to release impurity atoms from their substitutional sites. The material is then best treated so that the released impurity atoms precipitate to form the insulating material in the region of radiation damage. The ions employed may be protons, He ions, or C ions, and the material is subjected to electron irradiation simultaneously with or subsequently to the ion bombardment. An example is given whereby a region of insulating SiC is formed in a body of single-crystal Si. (UK)
- Research Organization:
- Originating Research Org. not identified
- NSA Number:
- NSA-29-019005
- OSTI ID:
- 4339898
- Report Number(s):
- GB 1334520
- Resource Relation:
- Patent File Date: 1970 Jun 12; Other Information: Orig. Receipt Date: 30-JUN-74; Bib. Info. Source: UK (United Kingdom (sent to DOE from))
- Country of Publication:
- United Kingdom
- Language:
- English
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Related Subjects
Ceramics
& Other Materials-Plastics & Other Materials-Radiation Effects
*MICROELECTRONICS- FABRICATION
*SEMICONDUCTOR DEVICES- FABRICATION
*SEMICONDUCTOR MATERIALS- FABRICATION
*SILICON- CRYSTAL DOPING
CARBON IONS
DIELECTRIC MATERIALS
DOPED MATERIALS
ELECTRON BEAMS
HELIUM IONS
ION BEAMS
IRRADIATION PROCEDURES
LAYERS
PHYSICAL RADIATION EFFECTS
PROTON BEAMS
SILICON CARBIDES