Total dose effects of ionizing radiation on MOS structures at 90$sup 0$K
Conference
·
· IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., v. NS-20, no. 6, pp. 319-325
OSTI ID:4312861
Experimental dath at 90 deg K for chromium-doped and undoped MOS structures are presented. The data include the ionizing-dose dependence of the flat-band voltage of MOS capacitors and of the
- Research Organization:
- Rockwell International, Anaheim, CA
- NSA Number:
- NSA-29-029583
- OSTI ID:
- 4312861
- Journal Information:
- IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., v. NS-20, no. 6, pp. 319-325, Conference: Annual conference on nuclear and space radiation effects, Logan, UT, 23 Jul 1973; Other Information: Orig. Receipt Date: 30-JUN-74
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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