Processing and properties of Bi-2212 thick films
Book
·
OSTI ID:43020
- ETH Zuerich (Switzerland). Nichtmetallische Werkstoffe
Bi-2212 thick films were produced by tape casting and partial melting on Ag-substrates. Highly aligned microstructures throughout the oxide thickness of 20 {mu}m were achieved. A reducing heat treatment optimizing the oxygen stoichiometry of the Bi-2212 phase led to a {Tc} of 90 K and to a j{sub c} of 1.75{center_dot}10{sup 4} A/cm{sup 2} at 77 K/0 T using the 1 {mu}V/cm criterion. The current-voltage characteristic of the thick films follows the power law E{proportional_to}j{sup {alpha}} at 77 K in zero field. The exponent {alpha} = 5 for the films is considerably smaller than those found for melt processed bulk material.
- OSTI ID:
- 43020
- Report Number(s):
- CONF-9310224--; ISBN 0-87339-271-X
- Country of Publication:
- United States
- Language:
- English
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