Copper oxide films formed by reactive cathodic arc deposition

Conference · Sat Dec 31 04:00:00 EST 1994

OSTI ID:42984

Anders, S; Anders, A; Brown, I G; MacGill, R A; Dickinson, M R; Castro, R A ^[1]

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1. Lawrence Berkeley Lab., CA (United States)

Copper oxide (CuO) films show radiation properties close to an ideal black body. They are used, e.g., for radiation cooling of RF kickers at the Advanced Light Source of Lawrence Berkeley Laboratory. Commonly CuO films are deposited by wet-chemical plating, but the films are not satisfactory in vacuum, and hazardous waste is produced. Alternative ways of coatings are needed. Several versions of new deposition technique for CuO have been developed, all of them are based on a cathodic arc operating in an oxygen atmosphere of 100--300 mTorr. The substrates (RF kickers) were made from aluminum. Adhesion of the film to the substrate was shown to be improved by applying a pulsed negative bias voltage of up to {minus}2 kV. The underlying idea was to accelerate ions in an electric sheath so that they arrive at the substrate surface with substantial energy to cause direct and recoil implantation and atomic mixing of film and substrate material. Another version of cathodic arc deposition was to use the substrate as the anode of the cathodic arc deposition was to use the substrate as the anode of the cathodic arc; in this way the flux of plasma to the substrate was enhanced and so was the deposition rate without deteriorating film adhesion. This version of the coating process was chosen for deposition of large workpieces (of order 5,000 cm{sup 2}) because of the better efficiency.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 42984
• Report Number(s): CONF-940604--; ISBN 0-7803-2006-9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
43 PARTICLE ACCELERATORS
ADVANCED LIGHT SOURCE
COATINGS
COPPER OXIDES
CRYSTAL STRUCTURE
DEPOSITION
ELECTRIC DISCHARGES
KICKER MAGNETS
PLASMA PRODUCTION