RESEARCH ON GROWING OF CADMIUM SULFIDE CRYSTALS FOR DOSIMETER PURPOSES. Final Report for Period April 17, 1957 to July 15, 1958
The growth of cadmium sulflde single crystals of large size and with desirable properties was successfally carried out in a farnace consisting of ana outer and inner chamber. By strategic location of the polished silica plates, total recovery of usable crystalline cadmiuan sulfide was 83 percent of theoretical. Single crystals weighing more than 100 grazas were grown reproducibly. Obtaining large single crystals free of strain is accomplished oniy by obtaining precise temperature control and temperature gradient throughout the entire volatilization-deposition period of 100 hours. The optimum temperature conditions for crystal growth were determined. It was fouad, as a result of a statistical study in which 187 cadmium sulfide crystal specimens were irradiated wita gamma rays, that crystals having dark resistivities in the range of 5 x 10/sup 7/ to 1 x 10/sup 8/ ohza-cm were in every case sensitive to gamma radiation but that a slightiy lower resistivity range of 1 x 10/sup 6/to 5 x 10/ sup 7/ ohm-cm provided specimens with a greater maximum sensitiwity. While not all the specimens in tae latter range were sensitive to gamma radiation, those that were sensitive tended to have a higher degree of sensitivity than in any other resistivity range. Ower 25% of the crystals showed an increase of more than 3 microamperes of curreut with irradiation of only 1 r/hr and with 175 volts DC applied across the electrodes. (C.H.)
- Research Organization:
- Eagle-Picher Research Labs. Mining and Smelting Div., Miami, Okla.
- DOE Contract Number:
- DA-36-039-SC-73270
- NSA Number:
- NSA-13-001958
- OSTI ID:
- 4296814
- Report Number(s):
- NP-7039
- Resource Relation:
- Other Information: DA Project 3-99-00-100. Orig. Receipt Date: 31-DEC-59
- Country of Publication:
- United States
- Language:
- English
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