Pressure-induced semiconductor-metal transitions in amorphous Si and Ge
Journal Article
·
· Phil. Mag., v. 29, no. 3, pp. 547-558
- Research Organization:
- Tokyo Univ.
- NSA Number:
- NSA-30-004788
- OSTI ID:
- 4286976
- Journal Information:
- Phil. Mag., v. 29, no. 3, pp. 547-558, Journal Name: Phil. Mag., v. 29, no. 3, pp. 547-558; ISSN PHMAA
- Country of Publication:
- United Kingdom
- Language:
- English
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