Sensor Driven Intelligent Control System For Plasma Processing - Final CRADA Report

Technical Report · Mon Feb 23 04:00:00 EST 1998

DOI:https://doi.org/10.2172/4286· OSTI ID:4286

Bell, G; Campbell, V B

This Cooperative Research and Development Agreement (CRADA) between Innovative Computing Technologies, Inc. (IC Tech) and Martin Marietta Energy Systems (MMES) was undertaken to contribute to improved process control for microelectronic device fabrication. Process data from an amorphous silicon thin film deposition experiment was acquired to validate the performance of an intelligent, adaptive, neurally-inspired control software module designed to provide closed loop control of plasma processing machines used in the microelectronics industry. Data acquisition software was written using LabView The data was collected from an inductively coupled plasma (ICP) source, which was available for this project through LMES's RF/Microwave Technology Center. Experimental parameters measured were RF power, RF current and voltage on the antenna delivering power to the plasma, hydrogen and silane flow rate, chamber pressure, substrate temperature and H-alpha optical emission. Experimental results obtained were poly-crystallin silicon deposition rate, crystallinity, crystallographic orientation and electrical conductivity. Owing to experimental delays resulting from hardware failures, it was not possible to assemble a complete data for IC Tech use within the time and resource constraints of the CRADA. IC Tech was therefore not able to verify the performance of their existing models and control structures and validate model performance under this CRADA.

• Research Organization: Oak Ridge Y-12 Plant, Oak Ridge, TN (US)
• Sponsoring Organization: USDOE Office of Defense Programs (DP) (US)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 4286
• Report Number(s): Y/AMT-615; Crada Number Y-1296-0430; Crada Number Y-1296-0430
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
CHEMICAL VAPOR DEPOSITION
CLOSED-LOOP CONTROL
CONTROL SYSTEMS
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
FABRICATION
MICROELECTRONIC CIRCUITS
PLASMA HEATING
PROCESS CONTROL
SILICON