A Monte Carlo binary collision model for BF{sub 2} implants into (100) single-crystal silicon
Journal Article
·
· Journal of the Electrochemical Society
- Univ. of Texas, Austin, TX (United States). Microelectronics Research Center
- Los Alamos National Lab., NM (United States)
This paper describes a physically based Monte Carlo model and simulator for accurate simulation of BF{sub 2} ion implantation in (100) single-crystal silicon. An improved electronic stopping model and a damage generation model have been developed and implemented in the simulator. These new, physically based, models greatly improve the capability for predicting BF{sub 2} as-implanted profiles. The profile dependence on the implant tilt and rotation angles as well as on the implant dose and energy can be very well predicted over the energy range from 15 to 65 keV.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 428180
- Journal Information:
- Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 11 Vol. 143; ISSN 0013-4651; ISSN JESOAN
- Country of Publication:
- United States
- Language:
- English
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