Radiation Effects in Semiconductors. Thermal Conductivity and Thermoelectric Power
Journal Article
·
· Journal of Applied Physics
The use of thermal conduction and thermoelectric measurements in studying radiation damage effects in semiconductors is discussed. The conclusion is reached that in the present state of knowledge such measurements will probably be more helpful in studying the kinetics of the formation and annealing of radiation-introduced defects than in characterizing the structure of such defects.
- Research Organization:
- Bell Telephone Labs., Inc., Murray Hill, N.J.
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-13-020594
- OSTI ID:
- 4238258
- Journal Information:
- Journal of Applied Physics, Vol. 30, Issue 8; Other Information: Orig. Receipt Date: 31-DEC-59; ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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