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U.S. Department of Energy
Office of Scientific and Technical Information

TRANSISTORIZED PULSE AMPLIFIERS. I. MEASUREMENT OF THE HIGH-FREQUENCY PARAMETERS OF TRANSISTORS

Technical Report ·
OSTI ID:4238189
The techniques and equipment employed to measure the small signal short circuit admittance parameters of drift transistors over the range 1 to 30 Mc/s are described. The equipment and methods used are suitable for measurements on other types of high-frequency transistors over the same frequency range. Topics discussed include the selection of the most suitable set of parameters to measure, the measuring equipment, and biasing circuits. The results obtained for six type 2N247 Drift Transistors are presented. Appendices deal with some subsidiary measurements on the highfrequency behavior of coupling capacitors and the effects of such capacitors on the measured values of complex admittances. (auth)
Research Organization:
Atomic Energy of Canada Ltd. Chalk River Project, Chalk River, Ont.
NSA Number:
NSA-13-021077
OSTI ID:
4238189
Report Number(s):
CREL-829; AECL-859
Country of Publication:
Canada
Language:
English