Field emitted beam diagnostics for RF amplifiers
- Naval Research Lab., Washington, DC (United States). Electronic Science and Technology Div.
Gated electron emitters, such as Field Emitter Arrays (FEA) hold the potential for significantly impacting next-generation high frequency amplifiers. FEA`s may allow for RF amplifier designs which eliminate the high voltage power supplies, complex modulating circuitry, and magnetic field generation common with linear beam tubes. Beam diagnostics including emittance, angular distribution of the current and effects of coating of single and multiple tip arrays are imperative for the determination of array performance characteristics. Each one of these characteristics determination involves detection and simultaneous recording of field emitted electrons and their absolute position over a very small area. In order to minimize damage to the field emitters from ion bombardment it is prudent to operate in an Ultra-High-Vacuum (UHV) environment. An inchworm controlled microfabricated detector system with laser interferometric feedback has been developed to provide an absolute position characterization of the field emitted electrons in an UHV environment with nanometric precision. The addition of a few components will allow the measurement of emittance of the FEA`s for electron gun design. The details of the instrumentation with experimental results and its theoretical correlation will be shown.
- Sponsoring Organization:
- Office of Naval Research, Washington, DC (United States)
- OSTI ID:
- 423035
- Report Number(s):
- CONF-960634--
- Country of Publication:
- United States
- Language:
- English
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