Microstructure, electrical conductivity, and piezoelectric properties of bismuth titanate

Journal Article · Sun Dec 01 04:00:00 EST 1996 · Journal of the American Ceramic Society

DOI:https://doi.org/10.1111/j.1151-2916.1996.tb08086.x· OSTI ID:422717

Shulman, H S; Testorf, M; Damjanovic, D; Setter, N ^[1]

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1. Ecole Polytechnique Federal, Lausanne (Switzerland). Lab. de Ceramique

A study was conducted on the effects of microstructure, atmosphere, and several dopants on the electrical conductivity of bismuth titanate (Bi{sub 4}Ti{sub 3}O{sub 12}, BIT). Increased grain size increased the conductivity in undoped BIT as did acceptor dopants that substituted for either Bi (Ca and Sr) or Ti(Fe). A donor dopant (Nb) decreased the conductivity in BIT by as much as 3 orders of magnitude. The increased resistivity of Nb-doped BIT improved the polarization in an electric field. A piezoelectric coefficient, d{sub 33}, of 20.0 pC/N was achieved with a Nb-doped BIT composition corresponding to Bi{sub 4}Ti{sub 2.86}Nb{sub 0.14}O{sub 12}.

• Sponsoring Organization: USDOE
• OSTI ID: 422717
• Journal Information: Journal of the American Ceramic Society, Journal Name: Journal of the American Ceramic Society Journal Issue: 12 Vol. 79; ISSN 0002-7820; ISSN JACTAW
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH OXIDES
BULK DENSITY
CALCINATION
CALCIUM CARBONATES
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
IRON OXIDES
MICROSTRUCTURE
MILLING
NIOBIUM OXIDES
PIEZOELECTRICITY
SAMPLE PREPARATION
SCANNING ELECTRON MICROSCOPY
SINTERING
STRONTIUM CARBONATES
TITANIUM OXIDES
X-RAY DIFFRACTION