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Title: Correlation between short range order defects and electron trap level spectra in amorphous SiO$sub 2$ layers obtained by TSEE technique

Conference ·
OSTI ID:4218850
; ;  [1]
  1. ed.
+ Show Author Affiliations

Research Organization:
Univ., Rostock, Ger.
NSA Number:
NSA-32-011923
OSTI ID:
4218850
Report Number(s):
CONF-731008-
Resource Relation:
Conference: 4. international symposium on exoelectron emission and dosimetry, Liblice, Czechoslovakia, 1 Oct 1973; Other Information: Orig. Receipt Date: 31-DEC-75; Related Information: 4th international symposium on exoelectron emission and dosimetry, Liblice, Czechoslovakia, October 1--3, 1973
Country of Publication:
Costa Rica
Language:
English

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Related Subjects

N50140* -Metals
Ceramics
& Other Materials-Ceramics & Cermets-Radiation Effects
N50130 -Metals
Ceramics
& Other Materials-Ceramics & Cermets-Properties
Structure & Phase Studies
*SILICON OXIDES- PHYSICAL RADIATION EFFECTS
AMORPHOUS STATE
CRYSTAL DEFECTS
ELECTRON EMISSION
ELECTRONIC STRUCTURE
ENERGY LEVELS
ENERGY SPECTRA
GLOW CURVE
NEUTRONS
PEAKS
TRAPPED ELECTRONS
TRAPPING