Epitaxial TiN based contacts for silicon devices
- North Carolina State Univ., Raleigh, NC (United States)
We have grown high quality epitaxial TiN/Si(100) and Cu/TiN/Si(100) heterostructures by pulsed laser deposition. The epitaxial TiN films have the same low (15{mu}{Omega}-cm) resistivity as TiSi{sub 2} (C-54) phase with excellent diffusion barrier properties. Auger and Raman spectroscopy revealed that the films were stoichiometric TiN and free from oxygen impurities. The x-ray diffraction and transmission electron microscope (TEM) results showed that the TiN films deposited at 600{degree}C were single crystal in nature with epitaxial relationship <100>TiN<100>Si. The Rutherford baskscattering channeling yield for TiN film was found to be in the range of 10-13 %. The epitaxy of Cu on TiN was found to be cube-on-cube, i.e., <100>Cu<100>TiN<100> Si. The Cu/TiN and TiN/Si interfaces were found to be quite sharp without any indication of interfacial reaction. The growth mechanism of copper on TiN was found to be three dimensional. We discuss domain matching epitaxy as a mechanism of growth in these large lattice mismatch systems, where three lattice constants of Si(5.43 A) match with four of TiN(4.24 A) and seven units of Cu(3.62 A) match with six of the TiN. Thus, for next generation of device complementary metal oxide semiconductor structures, Cu/TiN/Si(100) contacts hold considerable promise, particularly since Cu is a low resistivity metal (1.6{mu}{Omega}-cm) and is considerably more resistant to electromigration than Al. 19 refs., 13 figs., 1 tab.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 420697
- Report Number(s):
- CONF-960202-; ISSN 0361-5235; TRN: 97:000616-022
- Journal Information:
- Journal of Electronic Materials, Vol. 25, Issue 11; Conference: Annual meeting and exhibition of the Minerals, Metals and Materials Society (TMS), Anaheim, CA (United States), 4-8 Feb 1996; Other Information: PBD: Nov 1996
- Country of Publication:
- United States
- Language:
- English
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