Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Comparison between Al- and B-doped ZnO window layers for CuInSe{sub 2} thin film solar cells

Conference ·
OSTI ID:417705
; ;  [1]
  1. Aoyama Gakuin Univ., Tokyo (Japan). Dept. of Electrical Engineering and Electronics
A comparative study of several properties of ZnO:Al and ZnO:B films grown by magnetron sputtering has been performed. The influence of these window layers on device performance has also been investigated. Sputter-deposited ZnO:B films were used for the first time as a window material of CIS thin film solar cells. The short circuit current was improved by replacing ZnO:Al with ZnO:B window layers. A discussion of the issues relating to ZnO window layers for improving cell performance is presented.
OSTI ID:
417705
Report Number(s):
CONF-960401--; ISBN 1-55899-329-0
Country of Publication:
United States
Language:
English