Comparison between Al- and B-doped ZnO window layers for CuInSe{sub 2} thin film solar cells
Conference
·
OSTI ID:417705
- Aoyama Gakuin Univ., Tokyo (Japan). Dept. of Electrical Engineering and Electronics
A comparative study of several properties of ZnO:Al and ZnO:B films grown by magnetron sputtering has been performed. The influence of these window layers on device performance has also been investigated. Sputter-deposited ZnO:B films were used for the first time as a window material of CIS thin film solar cells. The short circuit current was improved by replacing ZnO:Al with ZnO:B window layers. A discussion of the issues relating to ZnO window layers for improving cell performance is presented.
- OSTI ID:
- 417705
- Report Number(s):
- CONF-960401--; ISBN 1-55899-329-0
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
ALUMINIUM ADDITIONS
BORON ADDITIONS
CARRIER MOBILITY
COPPER SELENIDE SOLAR CELLS
CURRENT DENSITY
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
FABRICATION
FILL FACTORS
GRAIN SIZE
INDIUM SELENIDE SOLAR CELLS
MORPHOLOGY
OPTICAL PROPERTIES
PERFORMANCE
SCANNING ELECTRON MICROSCOPY
SPUTTERING
X-RAY DIFFRACTION
ZINC OXIDES
ALUMINIUM ADDITIONS
BORON ADDITIONS
CARRIER MOBILITY
COPPER SELENIDE SOLAR CELLS
CURRENT DENSITY
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
FABRICATION
FILL FACTORS
GRAIN SIZE
INDIUM SELENIDE SOLAR CELLS
MORPHOLOGY
OPTICAL PROPERTIES
PERFORMANCE
SCANNING ELECTRON MICROSCOPY
SPUTTERING
X-RAY DIFFRACTION
ZINC OXIDES