Formation chemistry of polycrystalline Cu(InGa)Se{sub 2} thin-film absorbers prepared by selenization of Cu-Ga/In stacked precursor layers with H{sub 2}Se gas

Book · Tue Dec 31 04:00:00 EST 1996

OSTI ID:417673

Kushiya, K; Kuriyagawa, S; Kase, T; Sugiyama, I; Tachiyuki, M; Takeshita, H ^[1]

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1. Showa Shell Sekiyu K.K., Atsugi, Kanagawa (Japan). Central R and D Lab.

The purpose of this study is to improve the reliability and reproducibility of the fabrication process for polycrystalline Cu(InGa)Se{sub 2} (CIGS) thin-film absorbers and to make a better absorber with higher efficiency. The current baseline process of selenization has been evaluated through the investigation of the formation chemistry of the device-quality CIGS thin-film absorbers with a graded band-gap structure. It has been verified that the current selenization process has been performed in a good balancing point with both Cu/III ratio and thickness of the precursor layer and the total amount of Se through H{sub 2}Se gas incorporated from the surface during the selenization. A simplified model to explain the formation chemistry of the selenization in this study has been proposed.

• OSTI ID: 417673
• Report Number(s): CONF-960401--; ISBN 1-55899-329-0
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
ALUMINIUM ADDITIONS
AUGER ELECTRON SPECTROSCOPY
CADMIUM SULFIDES
COPPER SELENIDES
CURRENT DENSITY
EFFICIENCY
ELECTRIC POTENTIAL
EMISSION SPECTROSCOPY
EXPERIMENTAL DATA
FABRICATION
FILL FACTORS
GALLIUM SELENIDES
GLASS
INDIUM SELENIDES
MICROSTRUCTURE
MOLYBDENUM
PERFORMANCE
SCANNING ELECTRON MICROSCOPY
SELENIUM HYDRIDES
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SUBSTRATES
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY
ZINC OXIDES