THE GROWTH OF PRISMATIC DISLOCATION LOOPS DURING ANNEALING. Technical Report No. 20
Technical Report
·
OSTI ID:4176277
Recent observations of the groUh of quenched-in dislocation loops during annealing of aluminum are discussed. A mechanism for the coalescence of loops is proposed which depends on short-circuit diffusion around the periphery of prismatic dislocation loops. This mechanism is contrasted with the theory of loop coalescence by vacancy diffusion through the matrix. It is shown that the experimental observations are in better accord with the shortcircuit diffusion theory. Interpretation of the experimental observations on the basis of the short-circuit diffusion mechanism leads to a value for the activation energy for diffusion along a dislccation line. For aluminum this value is calculated to be 0.7 ev. (auth)
- Research Organization:
- California. Univ., Berkeley. Minerals Research Lab.
- NSA Number:
- NSA-14-019431
- OSTI ID:
- 4176277
- Report Number(s):
- NP-8852
- Country of Publication:
- United States
- Language:
- English
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