THE DEPENDENCE OF THE HALL COEFFICIENT ON THE MAGNETIC FIELD INTENSITY IN SILICON (in Russian)
Journal Article
·
· Fiz. Tverdogo Tela
OSTI ID:4172425
The Hall coefficient, R, was measured in two n-type and 5 p-type silicon semiconductors. Measurements were taken at 114 deg , 136 deg , and 300 deg K for all samples. The relative variation, R/R/sub max/ of the Hall coefficient was independent of temperature and reached a constant value ior a magnetic field of 1.0 to 1.2 x 10/sup 4/ gauss. For magnetic fields between 100 and 9.0 x 10/sup 3/ gauss the Hall coefficient increased linearly; also n- and p-type silicon had the same type of dependence on field, in contrast to n- and p-type germanium. (TTT)
- Research Organization:
- Inst. of Physics and Tech., Academy of Sciences, USSR
- NSA Number:
- NSA-14-022198
- OSTI ID:
- 4172425
- Journal Information:
- Fiz. Tverdogo Tela, Journal Name: Fiz. Tverdogo Tela Vol. Vol: 1
- Country of Publication:
- Country unknown/Code not available
- Language:
- Russian
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