Material and submicron bubble device properties of (LuSm)$sub 3$Fe$sub 5$$O$$sub 12$

Conference · Wed Jan 01 04:00:00 EST 1975 · AIP (Am. Inst. Phys.) Conf. Proc., no. 24, pp. 647-648

OSTI ID:4163053

Bullock, D C; Carlo, J T; Mueller, D W; Brewer, T L

The garnet, Lu/sub x/Sm/sub 3-x/Fe$sub 5$$O$$sub 12$, with x ranging from 1.5 to 1.9, has been epitaxially grown on gadolinium gallium garnet substrates by conventional LPE dipping techniques. This range of compositions has q greater than 1 and supports submicron diameter magnetic bubbles. For a x = 1.8 composition, the coercivity, H/sub c/, is 0.05 Oe and the anisotropy field, H/sub K/, is 4360 Oe. The wall mobility, $mu$, was measured by bubble translation and is 192 cm/sec-Oe for a x = 1.5 composition. Uniform skewing but no hard bubble behavior was observed in the bubble translational studies. Magnetic bubble T-bar permalloy circuits have been fabricated by E-Beam patterning and electroplating on these films. Quasistatic bubble propagation has been observed for 0.8 $mu$m diameter bubbles at a drive field of 100 Oe. (auth)

• Research Organization: Texas Instruments Inc., Dallas
• NSA Number: NSA-33-003458
• OSTI ID: 4163053
• Conference Information: Journal Name: AIP (Am. Inst. Phys.) Conf. Proc., no. 24, pp. 647-648
• Country of Publication: United States
• Language: English

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