Method for improving the toughness of silicon carbide-based ceramics
Patent
·
OSTI ID:415774
Method of improving the toughness of SiC-based ceramics is disclosed. SiC, , AlN, Al{sub 2}O{sub 3} and optionally {alpha}-Si{sub 3}N{sub 4} are hot pressed to form a material which includes AlN polytypoids within its structure. 1 fig.
- Research Organization:
- Lockheed Martin Energy Syst Inc
- DOE Contract Number:
- AC05-84OR21400
- Assignee:
- Univ. of Michigan, Ann Arbor, MI (United States)
- Patent Number(s):
- US 5,580,510/A/
- Application Number:
- PAN: 8-166,675
- OSTI ID:
- 415774
- Country of Publication:
- United States
- Language:
- English
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