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U.S. Department of Energy
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New process technologies improve IGBT module efficiency

Conference ·
OSTI ID:415491
;  [1];  [2];  [3]
  1. Powerex Inc., Youngwood, PA (United States)
  2. Mitsubishi Electric, Fukuoka (Japan). Fukuoka Works
  3. Okayama Univ. of Science (Japan). Dept. of Electronic Engineering

New process technologies are extending the application range of IGBT modules. A 1,400V IGBT with significantly improved efficiency has been developed using an optimized epitaxial (punch-through) process. This new 1,400V device has a square turn-off switching SOA making it suitable for 575/600 VAC inverter applications. A very low saturation voltage 250V IGBT has been developed using a trench gate structure. This new 250V device offers significant size and efficiency advantages in battery powered applications including fork lift truck and UPS inverters.

OSTI ID:
415491
Report Number(s):
CONF-9510203--
Country of Publication:
United States
Language:
English

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