Single-heterostructure distributed-feedback GaAs-diode lasers

Journal Article · Tue Jul 01 04:00:00 EDT 1975 · IEEE J. Quant. Electron., v. QE-11, no. 7, pp. 439-449

DOI:https://doi.org/10.1109/JQE.1975.1068649· OSTI ID:4154259

Burnham, R D; Scifres, D R; Streifer, W

The fabrication, testing, and analysis of distributed-feedback (DFB) single-heterostructure (SH) electrically pumped GaAs lasers are reported. The techniques of fabricating the DFB grating and diode using interferometric exposure of photoresist, development, ion milling, liquid-phase-epitaxial growth, and diffusion are described in detail. Next, experimental results on a variety of diodes operating at 77$sup 0$K are presented. It is shown that narrow laser linewidth (less than 0.15 A) and low threshold operation (775 A/cm$sup 2$) can be obtained. Also reported is output coupling from the grating which results in highly collimated laser beams with divergence of approximately 0.35$sup 0$ . Coupling coefficients, which determine laser threshold, are computed as a function of device parameters including physical dimensions, refractive indices, grating size and shape, and Bragg order for single- and double-heterostructure geometries. Calculated and measured thresholds are shown to be in good agreement. (auth)

• Research Organization: Xeron Palo Alto Research Center, CA
• Sponsoring Organization: USDOE
• NSA Number: NSA-33-007210
• OSTI ID: 4154259
• Journal Information: IEEE J. Quant. Electron., v. QE-11, no. 7, pp. 439-449, Journal Name: IEEE J. Quant. Electron., v. QE-11, no. 7, pp. 439-449; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

*SEMICONDUCTOR LASERS-- FABRICATION
420300* --Engineering--Lasers
CRYSTAL GROWTH
EMISSION SPECTRA
EPITAXY
GALLIUM ARSENIDES
N42210* --Engineering--Facilities & Equipment--Lasers
PERFORMANCE