Microdefects in cast multicrystalline silicon
Conference
·
OSTI ID:415123
- Inst. of Crystal Growth Berlin (Germany)
The microdefect etching behavior of cast multicrystalline BAYSIX and SILSO samples is mainly the same as that of EFG silicon, in spite of the very different growth parameters applied to these two techniques and the different carbon contents of the investigated materials. Intentional decorating of mc silicon with copper, iron and gold did not influence the results of etching and with help of infrared transmission microscopy no metal precipitates at the assumed microdefects could be established. There are many open questions concerning the origin of the assumed, not yet doubtless proved microdefects.
- Research Organization:
- National Renewable Energy Lab., Golden, CO (United States)
- OSTI ID:
- 415123
- Report Number(s):
- NREL/SP--413-8250; CONF-9508143--Extd.Absts.; ON: DE95009278
- Country of Publication:
- United States
- Language:
- English
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