Fundamental aspects of metallic impurities and impurity interactions in silicon during device processing
Conference
·
OSTI ID:415119
- TEMIC, TELEFUNKEN, Heilbronn (Germany)
A review on the behavior of metallic impurities in silicon can be considerably simplified by a restriction on pure, dislocation-free, monocrystalline silicon. In this case interactions between different impurities and between impurities and grown-in lattice defects can be reduced. This restriction is observed in Chapter 1 for discussing the general behavior of metallic impurities in silicon.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- OSTI ID:
- 415119
- Report Number(s):
- NREL/SP-413-8250; CONF-9508143-Extd.Absts.; ON: DE95009278; TRN: 96:006512-0003
- Resource Relation:
- Conference: 5. workshop on the role of impurities and defects in silicon device processing, Copper Mountain, CO (United States), 13-16 Aug 1995; Other Information: PBD: Aug 1995; Related Information: Is Part Of Fifth workshop on the role of impurities and defects in silicon device processing. Extended abstracts; Sopori, B.L.; Luque, A.; Sopori, B.; Swanson, D.; Gee, J.; Kalejs, J.; Jastrzebski, L.; Tan, T.; PB: 160 p.
- Country of Publication:
- United States
- Language:
- English
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