Effects of ion implantation on amorphous Gd--Co

Technical Report · Tue Dec 31 23:00:00 EST 1974

OSTI ID:4142764

Venturini, E L; Richards, P M; Borders, J A; EerNisse, E P

Studies of stress, composition, and magnetic properties were made on amorphous Gd--Co thin films implanted with nitrogen ions at fluences between 10$sup 10$ and 10$sup 16$ ions/cm$sup 2$. The lateral stress peaks at 2 x 10$sup 11$ dynes/cm$sup 2$ for a fluence of 10$sup 14$ ions/cm$sup 2$. Magnetic resonance reveals that the net anisotropy H/sub A/ - 4$pi$M in the implanted layer decreases in the range of 10$sup 14$ to 10$sup 16$ ions/cm$sup 2$ and ultimately achieves a negative value considerably larger in magnitude than 4$pi$M in the film prior to the implantation. This effect can be partly explained by a reduction of Gd content in the implanted layer. But there have to be structural changes as well which alter the microscopic parameters. (auth)

• Research Organization: Sandia Labs., Albuquerque, N.Mex. (USA)
• NSA Number: NSA-33-007874
• OSTI ID: 4142764
• Report Number(s): SAND--75-5762
• Country of Publication: United States
• Language: English

Related Subjects

*COBALT BASE ALLOYS-- ION IMPLANTATION
*GADOLINIUM ALLOYS-- ION IMPLANTATION
360106* --Materials--Metals & Alloys--Radiation Effects
AMORPHOUS STATE
ANISOTROPY
CHEMICAL COMPOSITION
FILMS
ION BEAMS
MAGNETIC PROPERTIES
N50240* --Metals
Ceramics
& Other Materials--Metals & Alloys--Radiation Effects
NITROGEN IONS
STRESSES